Path: utzoo!attcan!utgpu!jarvis.csri.toronto.edu!rutgers!att!cbnewsh!beyer
From: beyer@cbnewsh.ATT.COM (jean-david.beyer)
Newsgroups: comp.arch
Subject: Re: FRAM
Summary: Ferroelectric memories were slow...
Message-ID: <1415@cbnewsh.ATT.COM>
Date: 14 Jun 89 12:34:47 GMT
References: <1012@aber-cs.UUCP>
Organization: AT&T Bell Laboratories
Lines: 16


When I was a summer student at Bell Laboratories, in the late 1950's,
a man named J.Reid Andersen (I am no longer sure of the spelling) was
making ferroelectric memories in the lab. He was using Barium Titanate,
as I recall. The things worked, but since they were so much slower than
thin film and magnetic core memories, they seem to have lost interest.
He put down 256 bits on a little chip  about the size of 1 square centimeter.
I assume todays  technology could increase the density somewhat, but I
do not know enough about it to know what would be required to make them
faster.

-- 
Jean-David Beyer
AT&T Bell Laboratories
Holmdel, New Jersey, 07733
attunix!beyer