Path: utzoo!utgpu!jarvis.csri.toronto.edu!rutgers!cs.utexas.edu!uunet!ficc!sms
From: sms@ficc.uu.net (Stanley M. Sutton)
Newsgroups: comp.arch
Subject: Re: FRAM
Summary: FRAMS in 1988
Message-ID: <4548@ficc.uu.net>
Date: 14 Jun 89 11:27:15 GMT
References: <1012@aber-cs.UUCP>
Organization: Service and Test
Lines: 21

In article <1012@aber-cs.UUCP>, pcg@aber-cs.UUCP (Piercarlo Grandi) writes:
> I had read many years ago (around 1981) an article in Electronics on ferroelectric
> memory. It is the invention apparently of a single person (an old style
> inventor?), and was developed in coolaboration between him and some West
> Coast govnt. lab. They had an argument on it (he alleged they wanted exclusive
> rights for peanuts or else...), and this set back the entire idea.
> 
I believe there was an article about a pair of US companies that were 
marketing FRAMs as military replacements for EEPROMs.  The major advantage
was that they were much more radiation resistant than standard EEPROMs.  Like
EEPROMS, the write cycle was *much* longer than the read cycle.  Both 
companies felt that they would eventually solve the problem.  If anyone is
interested, I think I could find the companies names and the article 
reference.  Please send email, thank you.  Also, I believe both companies
were going to market the memories at exactly the same prices as EEPROMs,
even though FRAMs are much cheaper to produce.
-- 
Stanley M. Sutton, Service & Test, Ferranti International Controls Corp.
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