Path: utzoo!utgpu!jarvis.csri.toronto.edu!mailrus!ames!apple!sun-barr!decwrl!decvax!mcnc!schacham
From: schacham@mcnc.org (Samuel E. Schacham)
Newsgroups: comp.unix.cray
Subject: Re: GaAs CMOS in Cray-3 ?
Keywords: Cray-3, GaAs, LSI, CMOS, hole mobility
Message-ID: <4939@alvin.mcnc.org>
Date: 25 Jul 89 04:29:06 GMT
References: <7048@microsoft.UUCP> <3892@portia.Stanford.EDU>
Reply-To: schacham@mcnc.org.UUCP (Samuel E. Schacham)
Distribution: usa
Organization: Microelectronics Center of NC; RTP, NC
Lines: 9

In article <3892@portia.Stanford.EDU> brooks@Portia.Stanford.EDU (Michael Brooks) writes:
    More More likely there is a set of ntype MESFETs that have "complementary"
 like threshold voltages.  When one is on, the other is off (basically
 one is an enhancment mode FET and the other is a depletion mode).



A combination of enhancement-depletion DOES NOT function as a CMOS!
There are basic differences.