Path: utzoo!attcan!uunet!aplcen!samsung!gem.mps.ohio-state.edu!tut.cis.ohio-state.edu!ucbvax!agate!saturn!pardo@cs.washington.edu
From: pardo@cs.washington.edu (David Keppel)
Newsgroups: comp.os.research
Subject: Re: Non-volatile Memory--EEPROM
Message-ID: <9826@saturn.ucsc.edu>
Date: 19 Nov 89 21:38:33 GMT
Sender: usenet@saturn.ucsc.edu
Organization: University of Washington, Computer Science, Seattle
Lines: 13
Approved: comp-os-research@jupiter.ucsc.edu


In <3004@ganymede.inmos.co.uk> davidb@inmos.co.uk (David Boreham) writes:
In article <9804@saturn.ucsc.edu> munck@chance.uucp (Robert Munck) writes:
[Flash EPROM devices for simulated disks; $160/Mb]

How about very slow, very low power, high-density, battery-backed CMOS
RAMs?  They might be cheaper and wouldn't bite the 10,000 cycle
limit.

	;-D on  ( If memory serves me correct )  Pardo
-- 
		    pardo@cs.washington.edu
    {rutgers,cornell,ucsd,ubc-cs,tektronix}!uw-beaver!june!pardo