Path: utzoo!utgpu!jarvis.csri.toronto.edu!cs.utexas.edu!swrinde!zaphod.mps.ohio-state.edu!gem.mps.ohio-state.edu!mips!mark
From: mark@mips.COM (Mark G. Johnson)
Newsgroups: comp.arch
Subject: Re: NEED INFORMATION on GaAs
Message-ID: <32521@max.mips.COM>
Date: 1 Dec 89 01:51:15 GMT
References: <4432.25756fb3@uwovax.uwo.ca>
Reply-To: mark@mips.COM (Mark G. Johnson)
Organization: MIPS Computer Systems, Sunnyvale, CA
Lines: 25

In article <4432.25756fb3@uwovax.uwo.ca> 4231_5107@uwovax.uwo.ca writes:
>
>	Any material concerning recent developments in GaAs, as well as
>background information on design, would be especially helpful. 
>

*The* standard reference paper is by Raytheon and MIT; it's the basis
of practically all commercially available GaAs (and InP) MESFET
performance modeling:

   H. Statz et al., IEEE Transactions on Electron Devices, Vol. ED-34,
   No. 2 (Feb 1987), pp. 160-169.

Of course some folks have their own, company-developed and highly
proprietary, data.  (Which they aren't about to publish.)


Since you're doing some literature search, have a look at the
low-field bulk mobility of electrons and of holes in silicon, GaAs,
InP, and PbTe.  Then draw a conclusion: why did all the Lead
Telluride researchers switch over to In/Ga/As/P in the 70's?
-- 
 -- Mark Johnson	
 	MIPS Computer Systems, 930 E. Arques, Sunnyvale, CA 94086
	(408) 991-0208    mark@mips.com  {or ...!decwrl!mips!mark}


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