Path: utzoo!utgpu!news-server.csri.toronto.edu!rutgers!usc!snorkelwacker!bloom-beacon!eru!luth!sunic!mcsun!ukc!inmos!inmos.co.uk!davidb From: davidb@inmos.co.uk (David Boreham) Newsgroups: comp.arch Subject: Interesting Memory Devices Message-ID: <7294@ganymede.inmos.co.uk> Date: 6 Jun 90 09:08:05 GMT Sender: news@inmos.co.uk Reply-To: davidb@inmos.co.uk (David Boreham) Organization: none Lines: 17 Followers of new memory architectures will be interested in the new Micron triple-port DRAM featured in the May edition of Electronic Design. This part is long overdue from the memory manufacturers and I hope that they get working and production parts as soon as possible. Well done to Mircon for taking the gamble to introduce a completely new memory device which can give huge benefits in certain kinds of system. David Boreham, INMOS Limited | mail(uk): davidb@inmos.co.uk or ukc!inmos!davidb Bristol, England | (us): uunet!inmos.com!davidb +44 454 616616 ex 547 | Internet: davidb@inmos.com