Path: utzoo!censor!geac!torsqnt!news-server.csri.toronto.edu!cs.utexas.edu!know!news.cs.indiana.edu!msi.umn.edu!cs.umn.edu!jkennedy From: jkennedy@umn-cs.cs.umn.edu (Joel Kennedy) Newsgroups: comp.lsi Subject: NPN device characteristics in SCNA20? Message-ID: <1990Dec6.164058.7650@cs.umn.edu> Date: 6 Dec 90 16:40:58 GMT Sender: jkennedy@cs.umn.edu (Joel Kennedy) Distribution: na Organization: University of Minnesota, Minneapolis - EE Dept. Lines: 11 Hello, I would like to consider having something fabricated using the NPN devices available on the SCNA20 MOSIS process and would like to know more about what properties they have. 1) Is there any "example" transistor with Spice models available through MOSIS mail requests? 2) Has anybody else done this? What sort of Rc, etc, was found? 3) Any other advice/warnings/etc would be appreciated. Thanks. Joel Kennedy kennedy@ee.umn.edu