Path: utzoo!censor!geac!torsqnt!news-server.csri.toronto.edu!cs.utexas.edu!sun-barr!ccut!s.u-tokyo!rkna50!nttlab!siva!yamauchi From: yamauchi@aela.ntt.JP (Noriyoshi Yamauchi) Newsgroups: sci.electronics Subject: Giant Micro-Electronics Message-ID: Date: 30 Jan 91 01:10:28 GMT Sender: news@siva.ntt.JP Distribution: sci.electronics Organization: Applied Electronics Lab., NTT Research Labs., Tokyo, Japan Lines: 122 SSDM '91 CALL FOR PAPERS 1991 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS Pacifico Yokohama, Yokohama, Japan August 27-29, 1991 SYMPOSIUM A: "GIANT MICRO-ELECTRONICS II" Summary Deadline: April 15, 1991 The International Conference on Solid State Devices and Materials (SSDM) sponsored by the Japan Society of Applied Physics is held annually in Japan to bring together a number of scientists and engineers actively engaged in the forefront of solid state devices and materials, including basic physics/ chemistry, innovations or significant improvements of devices, materials and process technologies. In the coming SSDM, a symposium on "Giant Micro- Electronics II" will be held. Original papers are solicited which have not been presented previously and which describes a new contribution in the following fields: Characteristics and evaluation methods of: /thin films of semiconductors, insulators, metals, and organic materials and /substrates for large area devices. Process technologies such as: /thin film formation methods and patterning methods over large areas. Elementary technologies such as: /structures, characteristics and theoretical models of thin film transistors, metal-insulator-metal (MIM) devices, diodes, and so on. Device technologies concerning: /device arrays, device structures, wiring, and manufacturing processes. Circuit desing and simulation concerning: /TFT, TFT-Liquid Crystal and /Redundancy. Thin film circuits concerning: /Peripheral circuits, interconnection and /defect inspection and repairing techniques and systems. Applications of large area electronics to: /displays, printers, sonsors, and so on. SUMMARY TO BE SUBMITTED Summaries must be written in English and typed on 8.5 inches x 11 inches or A4-size white bond papers. The first page must include the title, author(s), name, affiliation(s) and contents. the second page should be used for indicating figures, tables and photographs. 13 copies of 2-page summaries should be received by: Secretariat-SSDM '91 c/o Busines Center for Academic Societies Japan Crocevia Bldg. 2F, 23-1, Hongo 3-chome Bunkyo-ku, Tokyo 113, Japan Phone:+81-3-3817-5831 Fax: +81-3-3817-5836 Telex: 02722268 BCJSPJ before April 15, 1991. The Symposium Organizing Members will select papers on the baisis of summaries submitted. Notice of acceptance will be air-mailed at the end of May. EXTENDED ABSTRACT Authors of accepted papers will receive an author's kit for preparing an extended abstract of no more than 3 pages. The extended abstract must be received by Secretariat-SSDM '91 before July 1, 1991. The extended Abstracts will be published on the opening day of the Conference. INVITED SPEAKERS To date three speakers have accepted invitations to present their work. S. Morozumi and H. Ohshima (Seiko-Epson): "High Performance Poly-Si TFTs for LCDs" A. Chiang (Xerox, USA) "Poly Si TFTs and Material Technologies" (tentative title) M. Yuki, K. Masuno, Y. Hirai, M. Kunigata and T. Gunjima (Asahi Glass): "Low temperature Poly Si TFTs for LC/Polymer Composite Light Valves" SYMPOSIUM ORGANIZING MEMBERS A. Ishige (Mitsubishi) S. Kaneko (NEC) H. Kawakami (Hitachi) S. Kohda (NTT) M. Koyanagi (Hiroshima Univ.) M. Matsumura (Tokyo Inst. Technol.) W. I. Milne (Univ. Cambridge) H. Morimoto (Sharp) S. Morozumi (Seiko-Epson) Y. Oana (Toshiba) K. Oki (Fujitsu) I. Ota (Matsushita) N. Tsuda (Sanyo) S. Usui (Sony) -------- -- Noriyoshi Yamauchi NTT Applied Electronics Labs. Room M8-314A phone: 0422-59-2361 fax : 0422-59-3870