Xref: utzoo comp.lsi.cad:828 comp.lsi:1354 Path: utzoo!utgpu!news-server.csri.toronto.edu!cs.utexas.edu!sdd.hp.com!caen!karem.engin.umich.edu!ayman From: ayman@caen.engin.umich.edu (Ayman Kayssi) Newsgroups: comp.lsi.cad,comp.lsi Subject: Effective Resistance of MOSFETs Keywords: MOSFEST, Resistance, Risetime Message-ID: <1991Feb9.201136.18151@engin.umich.edu> Date: 9 Feb 91 20:11:36 GMT Sender: news@engin.umich.edu (CAEN Netnews) Followup-To: poster Organization: The University of Michigan, Ann Arbor Lines: 15 Is there a simple formula that relates the effective resistance of a mosfet to its dimensions and the rise time of the waveform at its gate ( when the transistor is the pull down of an inverter ) and possibly the capacitive load at its drain ? The simplest formula relates Reff to the dimensions, but that's not accurate enough. Thanks. -- [ Ayman Issam Kayssi | Email: ] [ Advanced Computer Architecture Lab. | ayman@eecs.umich.edu ] [ EECS Dept., Univ. of Michigan, Ann Arbor | ayman@caen.engin.umich.edu ]