Path: utzoo!utgpu!news-server.csri.toronto.edu!bonnie.concordia.ca!uunet!samsung!zaphod.mps.ohio-state.edu!magnus.ircc.ohio-state.edu!tut.cis.ohio-state.edu!sei!rsd From: rsd@sei.cmu.edu (Richard S D'Ippolito) Newsgroups: sci.electronics Subject: Re: Transistor leakage current ? Message-ID: <16150@as0c.sei.cmu.edu> Date: 18 Feb 91 18:05:11 GMT References: Reply-To: rsd@sei.cmu.edu (Richard S D'Ippolito) Distribution: sci Organization: Software Engineering Institute, Pittsburgh, PA Lines: 17 In article Jon Sreekanth writes: >I have a Sprague data book, which says, for MPSA42, Icbo is 100nA >at Vcb of 200V. Is Icbo the same thing as the leakage Ic in the >above circuit ? Sprague conveniently ignored to show their measurement >circuit, or define their terms. I hate to say this, but you need a better understanding of what you are reading -- Icbo IS a standard term whose definition you should know before reading a databook. Also, all of the measurement conditions (from which you can devine the circuit) are also given, namely, Vcb = 200V. It's like complaining that a recipe doesn't define 'tsp' -- if you don't know, you shouldn't be reading the recipe! Rich