Path: utzoo!utgpu!news-server.csri.toronto.edu!rpi!zaphod.mps.ohio-state.edu!wuarchive!rex!uflorida!mlb.semi.harris.com!cica22.mlb.semi.harris.com!jws From: jws@cica22.mlb.semi.harris.com (James W. Swonger) Newsgroups: sci.electronics Subject: Re: Discrete transistor models (SPICE) wanted Message-ID: <1991May2.201620.11396@mlb.semi.harris.com> Date: 2 May 91 20:16:20 GMT References: <1991May2.123900.2844@e2big.mko.dec.com> <91122.105828FC138001@ysub.ysu.edu> Sender: news@mlb.semi.harris.com Distribution: usa Organization: Harris Semiconductor, Melbourne FL Lines: 21 Nntp-Posting-Host: cica22.mlb.semi.harris.com Perhaps I should be clearer about what I need and what I need it for. I have to model a circuit made up of discretes (a hybrid, actually) and the transient results will be used to set design goals for my monolithic implementation, since the actual circuit is not in my posession. The edge rates we have been told are on the order of 2nS. I need a model for the 2N4209 which includes accurate CJC, CJE, TR and TF terms. Naturally I would prefer one which represents a normal device - not one with the datasheet minimum or maximum values plugged in. In addition, other parameters like VA, C2 and IK become important when you're running a device over the entire range rather than just a single point near beta peak. Making a useful general-purpose model requires a lot of work. I'm hoping there exists a library of models based on thorough characterization. I'd love to get a complete set and I'd be ecstatic to find temperature dependent models. Of course I'll take what I can get and be thankful for it.