Xref: utzoo sci.electronics:20278 comp.ai.neural-nets:3422 Path: utzoo!utgpu!news-server.csri.toronto.edu!cs.utexas.edu!wuarchive!zaphod.mps.ohio-state.edu!think.com!mintaka!ogicse!pdxgate!eecs.cs.pdx.edu!farjamit From: farjamit@eecs.cs.pdx.edu (Tom Farjami) Newsgroups: sci.electronics,comp.ai.neural-nets Subject: a question in regards to noise effect in subthrehold operation Message-ID: <2657@pdxgate.UUCP> Date: 18 May 91 06:27:09 GMT Sender: news@pdxgate.UUCP Reply-To: farjamit@eecs.cs.pdx.edu (Tom Farjami) Organization: Portland State University, Portland, OR Lines: 24 greetings, I have a question about effect of noise in subthreshold CMOS structures. Take a trans-amp as an example. Would the noise effect be greater than in strong inversion if operated in subthreshold or less ? It is my guess that noise effect in subthreshold is not very severe since device is slow and therefor can not respond to the noise; I may be wrong. I would like to have comments from experts in this field. Thank you. Sincerely, Tom Farjami farjamit@eecs.ee.pdx.edu May 17, 1991