Xref: utzoo rec.audio:31681 sci.electronics:20271 Newsgroups: rec.audio,sci.electronics Path: utzoo!utgpu!news-server.csri.toronto.edu!rpi!zaphod.mps.ohio-state.edu!sdd.hp.com!news.cs.indiana.edu!ux1.cso.uiuc.edu!news.iastate.edu!IASTATE.EDU!dickw From: dickw@IASTATE.EDU (Wallingford Richard) Subject: Re: Transitor deterioration Message-ID: <1991May17.165228@IASTATE.EDU> Followup-To: rec.audio Sender: news@news.iastate.edu (USENET News System) Reply-To: dickw@IASTATE.EDU (Wallingford Richard) Organization: Iowa State University References: <18030315@hpfcdj.HP.COM> <3961@polari.UUCP> <1991May16.194955.487@tc.fluke.COM> Distribution: usa Date: Fri, 17 May 1991 21:52:28 GMT Lines: 26 In article <1991May16.194955.487@tc.fluke.COM>, frankw@tc.fluke.COM (Frank Wang) writes: > There is a so called "metalization" in all bipolars, MOSFETs, and ICs that has > recently drawn much interests for QA guys in Intel and other big volume > semiconductor manufacturers. The term "metalization" came from the fact that > metal diffuse into contact regions and/or SiO2 regions under high temperature > or long time duration. This is not a major problem in old days. But, it is > becoming a problem now because the line width can go as thing as 0.35 um for > those high density DRAMs. > > frankw@milton.u.washington.edu On a related topic: Will all transistors eventually become useless chunks of silicon (or GaAs, or whatever) because of the extremely slow, but nonzero diffusion of n into p and p into n at room temperature? Dick -- dickw@iastate.edu