Path: utzoo!utgpu!news-server.csri.toronto.edu!rpi!usc!sdd.hp.com!decwrl!ogicse!pdxgate!eecs.cs.pdx.edu!farjamit
From: farjamit@eecs.cs.pdx.edu (Tom Farjami)
Newsgroups: sci.electronics
Subject: a question in regards to noise effects in subthreshold
Message-ID: <2658@pdxgate.UUCP>
Date: 18 May 91 06:30:49 GMT
Sender: news@pdxgate.UUCP
Reply-To: farjamit@eecs.cs.pdx.edu (Tom Farjami)
Organization: Portland State University, Portland, OR
Lines: 24







     greetings,

     I have a question about effect of noise in subthreshold
CMOS  structures.  Take a trans-amp as an example. Would the
noise effect be greater than in strong inversion if operated
in subthreshold or less ?

     It is my guess that noise effect in subthreshold is not
very  severe  since  device  is  slow  and  therefor can not
respond to the noise; I may be wrong. I would like  to  have
comments from experts in this field. Thank you.

        Sincerely,

        Tom Farjami
        farjamit@eecs.ee.pdx.edu

                        May 17, 1991