Relay-Version: version B 2.10 5/3/83; site utzoo.UUCP Posting-Version: version B 2.10.1 6/24/83; site decwrl.UUCP Path: utzoo!watmath!clyde!bonnie!akgua!whuxlm!harpo!decvax!decwrl!dec-rhea!dec-kirk!williams From: williams@kirk.DEC (John Williams 223-3402) Newsgroups: net.analog Subject: Heat and Solid State Message-ID: <2722@decwrl.UUCP> Date: Mon, 17-Jun-85 11:26:56 EDT Article-I.D.: decwrl.2722 Posted: Mon Jun 17 11:26:56 1985 Date-Received: Wed, 19-Jun-85 02:34:56 EDT Sender: daemon@decwrl.UUCP Organization: DEC Engineering Network Lines: 22 Two important effects that contribute to Solid State wearing out: 1) Diffusion If the device is extremely hot, the features will lose their clarity due to diffusion which will tend to make the crystal impurities homogenous. 2) Thermal Cycle When the device is powered up and down, The device expands and contracts causing micro fractures in the structure. The silicon will tend to anneal itself, and diffuse causing greater leakage currents, and the metal structure will tend to develop cracks, which will increase the series resistance. The major failure mechanism to date in Computers is that of the device slowing down due to these effects. If the timing requirements for this device are critical, then this effect constitutes a failure. John.