Relay-Version: version B 2.10 5/3/83; site utzoo.UUCP Path: utzoo!mnetor!seismo!lll-crg!nike!ucbcad!ucbvax!decwrl!kirk.dec.com!williams From: williams@kirk.dec.com (John Williams DTN 223-2163) Newsgroups: net.arch Subject: GaAs Message-ID: <5300@decwrl.DEC.COM> Date: Fri, 12-Sep-86 09:52:51 EDT Article-I.D.: decwrl.5300 Posted: Fri Sep 12 09:52:51 1986 Date-Received: Sat, 13-Sep-86 03:46:45 EDT Sender: daemon@decwrl.DEC.COM Organization: Digital Equipment Corporation Lines: 7 GaAs is 10-100 times faster than Silicon. Part of the problem with manufacturing it is that the covalent bonds between atoms is much weaker.( part of the reason it's so much faster ) As you put it through implantation, the crystal structure is broken. When you go to anneal it, there is a greater amount of diffusion. John.