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From: peter@ethz.UUCP (Peter Beadle)
Newsgroups: sci.physics,sci.space,comp.lsi
Subject: Re: Radiation effects on semiconductors
Message-ID: <169@bernina.UUCP>
Date: Tue, 4-Aug-87 08:27:11 EDT
Article-I.D.: bernina.169
Posted: Tue Aug  4 08:27:11 1987
Date-Received: Sat, 8-Aug-87 08:57:02 EDT
References: <1356@ssc-vax.UUCP> <107@rdlvax.UUCP>
Reply-To: peter@eiger.UUCP (Peter Beadle)
Distribution: world
Organization: Institute for Integrated Systems, ETH Zuerich, Switzerland
Lines: 24
Keywords: radiation semiconductors
Summary: radiation effects, some questions
Xref: mnetor sci.physics:1977 sci.space:2368 comp.lsi:197

In article <107@rdlvax.UUCP> kopaz@rdlvax.UUCP (John Anthony 'Echo' Kopaz) 
writes:
>
>if you want to discuss some aspects of emp or hem i would be interested.
>but these are emr as opposed to nuclear decay.

"do you want to talk about X" messages seems to comprise the entire
contents of comp.lsi. In an effort to get some sort of discussion
going and to learn something I pose the following questions:

1. What are the primary causes of radiation (in the largest sense of
the word) induced circuit failure.

2. What proportion of the effects are permenant and what proportion are
transitory.

3. What makes a radiation hard circuit "hard". We have already heard
about some quantitive measures of "hard", what I would like to know is
what I have to do to design a "hard" circuit.

4. What effects do process parameters have on radiation sensitivity.

5. I hear a lot about alpha particle hits on memories. What does an
alpha particle do as it passes through a 1Mbit D-ram.