Xref: utzoo rec.ham-radio:4021 sci.electronics:2248 Path: utzoo!mnetor!uunet!husc6!psuvax1!gondor.cs.psu.edu!przemek From: przemek@gondor.cs.psu.edu (Przemyslaw Klosowski) Newsgroups: rec.ham-radio,sci.electronics Subject: Re: build-it-yourself EPROM erasers (Just the facts) Message-ID: <3299@psuvax1.psu.edu> Date: 17 Feb 88 21:25:59 GMT References: <8802091255.AA23298@ucbvax.Berkeley.EDU> <12@ucsd.EDU> <21651@clyde.ATT.COM> <698@uthub.toronto.edu> <3711@ihlpf.ATT.COM> Sender: netnews@psuvax1.psu.edu Reply-To: przemek@gondor.cs.psu.edu (Przemyslaw Klosowski) Organization: Penn State University Lines: 25 This is written in response to the long and basically correct article about the physics of the EPROM. It explained th phenomenon correctly, but omitted the quantitative expression for the process: one expression is worth 1000 words :^) The physics of this process is simply of a dynamically activated system: the probability of the electron passing the barrier (and consequently the current, and the time to discharge the gate) is proportioonal to E-E 0 where e=2.7182818... - ----- E - electron energy kT k is Boltzman const e T is temperature E is activation energy 0 So: ypu can either raise the energy of the electrons ( by bombarding with UV light quanta) or raise the temperature. But you better raise it enough! UV has energy of ~3eV. Room temp kT is 25 meV; or in other words you have to raise temp to 120 * 300 K or 36000K to get the same discharge speed, if I got my numbers right. This is impractical :^) przemek@psuvaxg.bitnet psuvax1!gondor!przemek