Path: utzoo!mnetor!uunet!lll-winken!lll-tis!ames!mailrus!tut.cis.ohio-state.edu!bloom-beacon!mit-eddie!mit-amt!mit-caf!jtkung
From: jtkung@mit-caf.UUCP (Joseph Kung)
Newsgroups: sci.electronics
Subject: Re: V channel FET
Message-ID: <894@mit-caf.UUCP>
Date: 7 Apr 88 16:29:17 GMT
References: <2154@psivax.UUCP> <2799@midas.TEK.COM>
Reply-To: jtkung@mit-caf.UUCP (Joseph Kung)
Organization: Microsystems Technology Laboratory, MIT
Lines: 20

In article <2799@midas.TEK.COM> jeffw@midas.UUCP (Jeff Winslow) writes:
>In article <2154@psivax.UUCP> torkil@psivax.UUCP (Torkil Hammer) writes:
>>Scientists here are proud to announce the succesful test of a
>>Vacuum Channel Field Effect Transistor. (VCFET).
>
>Ummm, yes, come back when you've figured out how to implement VLSI with it.
>
>					:-)
>					Jeff Winslow

It can be implemented with CMOS circuitry, but the real benefit is not
the density of "VLSI" but the radiation hardness of the FET. No oxide
traps, etc. Great for military applications. The VGFET (vacuum gate
field effect transistor is more appropriate a name) has been
demonstrated here as well.

- Joe
-- 
Joseph Kung
ARPA Internet : jtkung@caf.mit.edu (Internet address : 18.0.62.232)
UUCP: ...!{ihnp4,harvard,seismo,rutgers}!mit-eddie!mit-caf!jtkung