Path: utzoo!attcan!uunet!lll-winken!ncis.llnl.gov!helios.ee.lbl.gov!pasteur!ucbvax!bloom-beacon!gatech!udel!berryh From: berryh@udel.EDU (John "Blue" Berryhill) Newsgroups: comp.arch Subject: Re: TI announcement Keywords: quantum effect transistor Message-ID: <6944@louie.udel.EDU> Date: 20 Jan 89 13:23:44 GMT References: <11462@haddock.ima.isc.com> <5621@phoenix.Princeton.EDU> Sender: usenet@udel.EDU Reply-To: berryh@udel.EDU (John "Blue" Berryhill) Organization: University of Delaware Lines: 20 In article <5621@phoenix.Princeton.EDU> mbkennel@phoenix.Princeton.EDU (Matthew B. Kennel) writes: >In article <11462@haddock.ima.isc.com) suitti@haddock.ima.isc.com (Stephen Uitti) writes: >)regions measuring 0.01-0.02 microns and offers the possibility of >)switching speeds 1,000 times faster than today's best semiconductor >)devices. > >0.01-0.02 um????? Just how _did_ they make it? That's a vertical dimension (base width), not a horizontal dimension. There are a number of deposition technologies that can produce layers of monoatomic size. While fast transistors are nice, just remember that in order to use that speed, you're going to need one heck of an interconnection technology. --------------------------=< John Berryhill >=-------------------------- 143 King William St. Newark, DE 19711 (302) 453-1578 "Them that killed her would have done so for a hatpin, let alone a hat."