Path: utzoo!utgpu!jarvis.csri.toronto.edu!mailrus!tut.cis.ohio-state.edu!ucbvax!hplabs!hpda!hpcuhb!hpcilzb!rd
From: rd@hpcilzb.HP.COM (Dick Dowell)
Newsgroups: comp.lsi.cad
Subject: Re: SPICE probs
Message-ID: <4240001@hpcilzb.HP.COM>
Date: 1 May 89 16:45:05 GMT
References: <17979@obiwan.mips.COM>
Organization: HP Design Tech Center - Santa Clara, CA
Lines: 10


 >I am trying to make a model for a schottky diode.  I set the eg parameter
 >to .69 as stated in the manual, but the model continues to behave as a
 >regular silicon diode.  What else must I do?

 EG is only used in the calculation of IS versus temperature.  I'm no expert,
 but I think the "room temperature" difference in Schottky versus regular
 diodes is the forward voltage drop.  You can either put a larger value
 for IS, or a smaller value for N in to change this.  Probably the larger
 value for IS is most correct.